In this report, the analytic method for the transport properties of semiconductor materials is given an explanation, and the sample of electrical characteristics was investigated by mans of this analytic method. This analysis is carried out by means of the measurement on the current vs voltage characteristic. The analyzed sample, ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe and CdTe layer was prepared by the vacuum deposition on this ITO. Then, the electrical characteristics of this sample were investigated by mans of the electric current transport analysis. The ZnSe-CdTe sample that CdTe layer is prepared on ITO-ZnSe(0.1μm) substrate has not high-density level at the junction surface, and the CdTe layer with little lattice imperfection can be prepared. From the analysis, the ZnSe-CdTe junction has the p type bending band structure on the CdTe side, and has the n type bending band structure on the ZnSe side. From the analytical result of this analytic method, the transport properties of this semiconductor materials sample became clear.