光応答測定による半導体内部構造解析方法

Analytic method of the optical response mode for semiconductor materials

Creators Ichibakase Tsuyoshi

In this report, the analytic method of the optical response mode for semiconductor materials is given an　explanation, and the two samples of electrical characteristics were investigated by means of this analytic　method. This analysis is carried out by means of the photoconduction characteristic measurement depend　on the electric field strength in the material. The material has different absorption coefficients each wave　lengths, and has different complete light absorption lengths. Then, it is possible to select the analysis area　at the material. First sample, ITO(Indium Tin Oxide) was used on the glass substrates as the transparent　electrode, and ZnSe and CdTe layer was prepared by the vacuum deposition on this ITO. Next sample,　ITO was used on the glass substrates as the transparent electrode too, and ZnSe, CdTe and ZnTe layers　were prepared by the vacuum deposition on this ITO. From the analytical result of this analytic method,　the electric field and potential distribution of two samples became clear.

[ISSN]0387-9232

[NCID]AN00031668