Ⅱ－Ⅵ族化合物半導体ITO－ZnSe－CdTe セルの電気特性

Transport properties of the ITO-ZnSe-CdTe cell

Creators Ichibakase Tsuyoshi

In this report, ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe and CdTe layer was prepared by the vacuum deposition on this ITO. Then, the electrical characteristics of this sample were investigated by mans of the electric current transport analysis. The ZnSe-CdTe sample that CdTe layer is prepared on ITO-ZnSe(0.1μm) substrate has not high-density level at the junction surface, and the CdTe layer with little lattice imperfection can be prepared. From the analysis, the ZnSe-CdTe junction has the p type bending band structure on the CdTe side, and has the n type bending band structure on the ZnSe side. This ITO-ZnSe(0.1μm)-CdTe sample was tested as a photo-cell for visible-light. This ITO-ZnSe(0.1μm)-CdTe sample has not sufficient electric current response for the light absorption of CdTe layer. It is presumed that the electric filed in the CdTe layer is not enough to drive the cell as a photo sensor.

[ISSN]0387-9232

[NCID]AN00031668