転位と不純物との相互作用に関する研究 (18) :　2 価不純物を含んだKCl 単結晶中の転位が不純物を乗り越えるときのエンタルピーとギブスの自由エネルギー

Study on the interaction between a dislocation and impurities Part XVIII The enthalpy and the Gibbs free energy of activation for the breakaway of a dislocation from the impurity in KCl single crystals doped with divalent impurities

Creators Kohzuki Yohichi

On the basis of the relative curve of strain-rate sensitivity and stress decrement due to oscillation,　the values of the enthalpy (ΔH(Tc )＝0.79 eV) and the Gibbs free energy of activation ( 0 ΔG ＝0.39 eV)　for the breakaway of the dislocation from the impurity were obtained for KCl:Sr2+ single crystals.　ΔH(Tc) and ΔG 0 correspond to the activation energy for overcoming the strain field around the I-V　(Impurity-Vacancy) dipole by a dislocation without an applied stress. The critical temperature, Tc , at　which the effective stress is zero was previously determined to be 289 K.

[ISSN]0387-9232

[NCID]AN00031668