Kohzuki Yohichi
Study on the interaction between a dislocation and impurities Part III Activation enthalpy for the breakaway of the dislocation from the impurity in KCl:Sr2+ single crystal
        大島商船高等専門学校紀要 Volume 39
        Page 105-109
        
    published_at 2006-12
            Title
        
        転位と不純物との相互作用に関する研究(3) : KCl:Sr2+単結晶中で転位が不純物から離脱するのに必要な活性化エンタルピーについて
        Study on the interaction between a dislocation and impurities Part III Activation enthalpy for the breakaway of the dislocation from the impurity in KCl:Sr2+ single crystal
        
    
        
            Source Identifiers
        
    
    
            Creator Keywords
        
            moving dislocation
            strain-rate sensitivity due to impurities
            activation enthalpy
    The strain-rate cycling tests during the Blaha effect measurement were carried out for KCl:Sr2+ single crystals at 80 to 240K. Activation enthalpy, H, for the breakaway of the dislocation from the impurity was obtained by using the (∆τ'/ ∆1nε)p , which is given by the difference between strain-rate sensitivity at first plateau place and at second one on the relative curve of strain-rate sensitivity and stress decrement. As a result,H(Tc) was found to be 0.63eV on the assumption that the interaction between a dislocation and the impurity is approximated by the Fleischer’s model. Tc is the critical temperature, at which the effective stress is zero.
        
        
            Languages
        
            jpn
    
    
        
            Resource Type
        
        departmental bulletin paper
    
    
        
            Publishers
        
            大島商船高等専門学校
    
    
        
            Date Issued
        
        2006-12
    
    
        
            File Version
        
        Version of Record
    
    
        
            Access Rights
        
        open access
    
    
            Relations
        
            
                
                
                [ISSN]0387-9232
            
            
                
                
                [NCID]AN00031668
            
    
