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Ichibakase Tsuyoshi


Analytic method of the optical response mode for semiconductor materials

大島商船高等専門学校紀要 Volume 42 Page 21-28
published_at 2009-12
OS10042000004.pdf
[fulltext] 541 KB
Title
光応答測定による半導体内部構造解析方法
Analytic method of the optical response mode for semiconductor materials
Creators Ichibakase Tsuyoshi
Source Identifiers
Creator Keywords
analytic method optical device Ⅱ-Ⅵcompounds CdTe ZnSe ITO
In this report, the analytic method of the optical response mode for semiconductor materials is given an explanation, and the two samples of electrical characteristics were investigated by means of this analytic method. This analysis is carried out by means of the photoconduction characteristic measurement depend on the electric field strength in the material. The material has different absorption coefficients each wave lengths, and has different complete light absorption lengths. Then, it is possible to select the analysis area at the material. First sample, ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe and CdTe layer was prepared by the vacuum deposition on this ITO. Next sample, ITO was used on the glass substrates as the transparent electrode too, and ZnSe, CdTe and ZnTe layers were prepared by the vacuum deposition on this ITO. From the analytical result of this analytic method, the electric field and potential distribution of two samples became clear.
Languages jpn
Resource Type departmental bulletin paper
Publishers 大島商船高等専門学校
Date Issued 2009-12
File Version Version of Record
Access Rights open access
Relations
[ISSN]0387-9232
[NCID]AN00031668