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Kohzuki Yohichi


Study on the interaction between a dislocation and impurities Part XVIII The enthalpy and the Gibbs free energy of activation for the breakaway of a dislocation from the impurity in KCl single crystals doped with divalent impurities

大島商船高等専門学校紀要 Volume 44 Page 109-112
published_at 2011-12
OS10044000016.pdf
[fulltext] 394 KB
Title
転位と不純物との相互作用に関する研究 (18) : 2 価不純物を含んだKCl 単結晶中の転位が不純物を乗り越えるときのエンタルピーとギブスの自由エネルギー
Study on the interaction between a dislocation and impurities Part XVIII The enthalpy and the Gibbs free energy of activation for the breakaway of a dislocation from the impurity in KCl single crystals doped with divalent impurities
Creators Kohzuki Yohichi
Source Identifiers
Creator Keywords
activation energy dislocation relative curve of strain-rate sensitivity and stress decrement
On the basis of the relative curve of strain-rate sensitivity and stress decrement due to oscillation, the values of the enthalpy (ΔH(Tc )=0.79 eV) and the Gibbs free energy of activation ( 0 ΔG =0.39 eV) for the breakaway of the dislocation from the impurity were obtained for KCl:Sr2+ single crystals. ΔH(Tc) and ΔG 0 correspond to the activation energy for overcoming the strain field around the I-V (Impurity-Vacancy) dipole by a dislocation without an applied stress. The critical temperature, Tc , at which the effective stress is zero was previously determined to be 289 K.
Languages jpn
Resource Type departmental bulletin paper
Publishers 大島商船高等専門学校
Date Issued 2011-12
File Version Version of Record
Access Rights open access
Relations
[ISSN]0387-9232
[NCID]AN00031668